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With the integration of integrated circuits continues to rise, the feature size of integrated devices has entered nanometer. Single electron transistor (SET) is satisfied as nanoelectronic devices, and the SET will be mixed with the composition of nano-MOS devices (SETMOS), is one of the hot current study. SETMOS as a new hybrid device combine the advantages of both, it also has the same Coulomb oscillation...
Due to the single electron transistor has the characteristics coulomb oscillation and adjustable threshold voltage, the single electron transistor is adapted to design the multiple value circuit. In this paper, a ternary multiplier is designed based on multigate single electron transistor, and the design uses the 3-T gate. The designed circuits have been simulated by SPICE. The results of simulation...
This paper present a circuit design of a 8-bit parity code generator using single-electron transistors (SETs). The design is based on the characteristic of multigate single-electron transistor and a single-electron transistor can realize a n-input exclusive-OR (XOR) gate or XNOR gate. The proposed design enable us to construct a 8-bit parity code generator using only four SETs. The simulation is performed...
Based on both the I-V characteristics of single-electron transistors and the MOS digital integrated circuit design concept, a good combination of single-electron transistors with MOS transistors is advanced to create a novel inverter, which, compared with the pure SET circuit, is considerably augmented in its voltage gain and drive capability. Then a close analysis was conducted of the inverter, on...
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