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A deposition process for in situ boron-doped LPCVD polysilicon with low tensile stress is described. The films are deposited with an amorphous microstructure and crystallised by post-deposition annealing. The final value of residual stress can be adjusted by the annealing temperature. The microstructure, resistivity, dopant concentration, residual stress and surface morphology, as well as the effect...
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