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Increasing leakage currents with CMOS technology scaling and the volatile nature of SRAM based memory technologies brings in the scope for several emerging nonvolatile memories such as spin transfer torque (STT) MRAMs. Their ability to consume low power, reliability and lower area overhead makes them eligible for a wide range of applications. In this paper, a novel pre charge sense amplifier (PCSA)...
This paper deals with the implementation of low voltage, energy efficient and high speed 1-bit Full Adder (FA) cell in pass transistor (PT) logic by using 20 nm compact model parameters. The existing full adder with pass transistor logic suffers from a drawback of replication of full swing in sum and carry outputs and voltage step existed in both the outputs at low to high transition. These will be...
Feature size of CMOS technology continues to scale down; new devices like FinFET are experimented and proposed as an alternative device due to its superior characteristics. In this paper we have presented low voltage, high speed 1-bit full adder cells in Branch Based Logic and Pass Transistor (BBL-PT) logic by using FinFET model parameters. In BBL-PT full adder lies a drawback i.e. voltage step existed...
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