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In this study, we investigate the Ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase Ron degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the Ron degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases...
We have investigated the effects of surface passivation thickness on the electrical performance of Al-GaN/GaN HEMTs with slant field plates. It is found that the existence of the silicon nitride passivation layer helps to improve the DC characteristics of the devices in terms of the lower drain current collapse, higher maximum DC transconductance, and higher maximum drain current. RF wise, the devices...
We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum...
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