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InAlGaAs/InP p-i-n photodiodes epitaxially grown on silicon substrate with a dark current density as low as 1.3 mA/cm2 at −3 V are demonstrated. Responsivity, bandwidth, and output power at 1-dB compression are 0.76 A/W, 8 GHz, and −3.4 dBm, respectively.
Microwave photonic radiators provide wide bandwidths and high powers at mm-wave frequencies that can be utilized in extremely high throughput wireless communications, and high resolution millimeter wave imaging systems where their rugged, compact designs enable integration into large scale millimeter wave phased arrays. This work presents the design, implementation and measurement of a millimeter...
We demonstrate high speed and high power evanescently-coupled waveguide modified uni-traveling-carrier photodiodes. These devices achieved 70 GHz bandwidth and as high as 7.8 dBm RF output power at 60 GHz.
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