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Infrared light emitting diodes efficiency based on GaAs substrate has been limited due to light trapping and total internal reflection of GaAs materials. In this paper we introduced a new method of combining surface plasmonic effect and photonic crystal structure to enhance not only light extraction efficiency but also internal quantum efficiency. Through Finite Difference Time Domain method we found...
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
We present a systematic study on a set of n-type GaAs-AlGaAs quantum-well infrared photodetectors (QWIPs) with varying Si doping density in the wells. It is revealed that the increase in doping density enhances proportionally the absorption efficiency and responsivity while increasing exponentially the dark current and hence the dark current noise. We experimentally confirm the theoretically predicted...
In this paper, we theoretically study the performance of a separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP single photon avalanche diode (SPAD) using a two-dimensional drift-diffusion model based on our experimental results. The electric field, dark current and breakdown voltage are calculated for the SPAD for different thickness of the charge and the multiplication layers,...
The theoretical study has been performed on a low dark current InGaAs/GaAs very-long-wavelength (>12 mum) quantum well infrared photodetector (VLW-QWIP), based on a double barrier resonant tunneling structure (DBRTS). The ground tunneling state of the central quantum well (QW) of the DBRTS resonates with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters...
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