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The advancing heterogeneous integration of various electronic components into a single package requires in particular further development of bonding technologies towards lower temperatures. In our present study, we show the successful joining of dies consisting of Cu-microbumps with In solder caps. Stable interconnections were achieved at a bonding temperature of 180 °C in 2 min by solid-liquid-interdiffusion...
With decreasing solder volumes and joint sizes, new aspects in electronics packaging occur. Previous publications report porous structures in Cu/Sn microbump interconnects after flux-assisted bonding and storage. The origin and mechanisms of pore formation are still discussed among researchers. In this study, the influence of no-clean flux during isothermal storage is investigated on soldered Cu/SnAg3...
Direct metal bonding is a preferred fine-pitch technology for stacking of Si dies in 3D integration. Cu is a metal of choice for direct metal bonding because it is the most common metal for redistribution layer in advanced semiconductor manufacturing, Cu has high conductivity and it is a low cost candidate. However Cu oxidises very fast in air which makes the bonding procedure challenging. In this...
Solid-liquid interdiffusion (SLID) interconnectsbased on Cu and Sn-solder are excellent candidates forstacking of Si chips in 3D integration. If the high-temperaturestable intermetallic compound (IMC) Cu3Sn is desired, themanufacturing of the interconnect can be very time consuming(long annealing time for growth of Cu3Sn). In this paper wepropose a method for the accelerated formation of Cu-Cu3Sn-Cu...
Thin film resistors (TFRs) have been fabricated by an optimized process. Titanium nitride (TiN) was used as the resistor layer and was deposited by metal organic chemical vapor deposition MOCVD) process. H2-N2 plasma was applied after every cycle of TiN deposition to stabilize TiN films. The fabrication effects such as deposition of the isolation layer, and passivation layer as well as formation of...
This study represents the results of Cu/In bonding based on solid-liquid interdiffusion (SLID) principle for 3D integration. Fine-pitch interconnects were successfully fabricated at the bonding temperature of 170 °C. The final microstructure of the interconnects consists of Cu and Cu/In intermetallic compounds (IMCs) and it is described in detail. The influence of the isothermal storage on the microstructure...
This study investigates the undercooling of commercially available SnAgCu solder alloys by Differential Scanning Calorimetry (DSC — rate 10 K/min). The results for solder spheres of 0 260 μm (free standing, no interfacial reaction) show that Sn-based solder alloys (investigated alloys Sn99.9; SnCu0.5; SnCu0.7; SnCu1.2; SnAg3.0; SnAg4.0; SnAg3.0Cu0.5; SnAg3.0Cu1.2; SnAg4.0Cu1.2; SnAg3.8Cu0.7) solidify...
The degradation of the Cu 6 Sn 5 intermetallic compound layer caused by pore formation in fine pitch Cu/Sn microbump interconnects is reported in this study. Die-to-die stacking was carried out using the solid–liquid interdiffusion principle. The diameters of the microbumps on the top (Cu/Sn) and bottom die (Cu) were 15 and 25μm, respectively. The stacking process was carried out in...
The investigation of the grain structure of Cu/SnAg interconnects produced by solid-liquid interdiffusion (SLID) bonding is presented in this study. The texture analysis was carried out using Electron Backscatter Diffraction (EBSD). The samples were manufactured by flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and square Cu bumps on the top die at...
The investigation of the bonding pressure change on the different quality aspects of the solid-liquid interdiffusion (SLID) interconnects is presented. The stacks were produced by a flux-assisted bonding of two Si dies with an area array of square Cu/SnAg bumps on the bottom die and Cu bumps on the top die at approx. 250 °C. The bonding pressure was varied between 0 MPa, 0.35 MPa, 0.69 MPa, 1.04 MPa,...
In this study SnCu solder spheres (Ø 270 μm, CR ∼ 1 K/s) were investigated in order to verify the solidified microstructure according to the Sn-rich part of the SnCu phase diagram. The investigated alloys are Sn99.9, SnCu0.25, SnCu0.5, SnCu0.7, SnCu0.9, SnCu1.2, SnCu1.5, and SnCu3.0. In order to understand the solidification process, such aspects as morphology, grain structure and undercooling were...
In order to investigate the microstructure of lead-free SnAgCu solders by optical microscopy and Electron Backscatter Diffraction it is necessary to provide a qualitative metallographic preparation. The difficulties of a preparation of these solders are connected with a high softness and presence of hard intermetallic compounds. They are discussed in this study and the appropriate recipe is proposed...
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