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The influences of reverse voltage stress on fluorine plasma treated AlGaN/GaN Schottky barrier diodes (SBDs) have been investigated. The carrier transport process during the reverse voltage stress is analyzed in detail, which can fully explain the various phenomena of the stressed devices. Furthermore, C-V measurements and the calculation of the barrier heights both bring a good agreement on the analysis.
The hot-carrier effect (HCE) in different channel length NMOSFETs is studied in this letter. It is found that the HCE becomes more serious with the channel length decreasing, which results in serious degradations of the threshold voltage and saturation drain current. Moreover, the relationships of the Stress Induced Leakage Current (SILC) degradation versus the threshold voltage and worst substrate...
Capacitance-voltage (C-V) characteristics have been measured in this paper to calculate the depth profiles of GaN carrier concentration in four different structure GaN-based HEMTs, revealing the consequences of Al2O3 oxide layer and etching depth on two-dimensional electron gas (2DEG) sheet density. Combining the energy band diagrams with the theoretical calculation formula of 2DEG, we analyzed corresponding...
Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data.
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