The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
With silicon carbide (SiC) MOSFETs becoming commercial available, high switching frequency is a prevailing trend to increase the power density and efficiency in power converters. Nevertheless, the device performance is critically determined by the values of parasitic inductances, where negative effects such as switching oscillations are usually presented. It is more likely troublesome for power modules...
Parasitic inductances of IGBT power modules have a major influence in device operation and circuit performance. They often incur negative effects such as switching oscillations, EMI, extra power losses and stress on the devices. This paper proposes a technique to extract parasitic inductances of IGBT power modules based on two-port scattering (S) parameter measurement. Accurate values of the internal...
This paper investigates the use of stacked depletion-mode n-channel MOSFET (D-MOS) for RF switch applications. Compared to the commonly used enhancement-mode MOSFET (E-MOS), the D-MOS transistor offers a significant reduction in on-state resistance (RON) and off-state capacitance (COFF) simultaneously and an excellent figure of merit (RonX Coff) of 134fs (roughly 3X improvement) can be achieved. With...
This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.
This paper investigates the concept of using depletion-mode n-channel MOSFET (D-MOS) as RF transmitter/receiver switch. A new TCAD modeling methodology to analyze large-signal GHz-range T/R operation of MOS transistors is developed. The D-MOS offers a significant reduction in RON and COFF over the widely used enhancement-mode MOSFET (E-MOS). An excellent figure of merit (RON×COFF) of 134 fs can be...
SiC MOSFETs are known to provide a better performance compared to Si IGBTs. However, they can also introduce undesirable behaviors like switching oscillations due to the existence of parasitic elements. In this paper, we introduce the turn-on and turn-off switching equivalent circuit models and validate these models with commercially available SiC MOSFETs. Based on the models, theoretical analysis...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.