High mobility InxGa1−xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InxGa1−xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InxGa1−xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl...
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