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In this paper, we obtain SiGe quantum dots with the diameters and density of 15–20nm and 1.8×10 11 cm −2 , respectively, by 193nm excimer laser annealing of Si 0.77 Ge 0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion happens. From the detailed statistical information about the size and shape of the quantum dots with different annealing...
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