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Plasmonic defect spectroscopy of STT-RAMs under high energy radiation is proposed here. We show that engineered constellation designs of the STT-RAMs can be used to understand radiation defects by measuring optical reflectivity, diffraction, or absorption.
We propose the use of SOI with silicon nitride layers for electronic control. A phase modulator with a Vπ·L of 1.02 V·mm and a compact vertical coupling taper are demonstrated in an easy-to-fabricate planar structure.