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Lead telluride (PbTe) thin films have been deposited on SiO2 substrate using thermal evaporation method. The structure of the films was found to have a face-centered cubic (fcc) with predominant grain growth in the (200) direction for both as-deposited and annealed samples up to 350 °C in vacuum for 1 h. The in-plain electrical resistivity and Hall measurements via van der Pauw method as a function...
Solid Liquid Inter-Diffusion (SLID) bonding using the systems Cu/Ga and Au/In have been investigated regarding the bonding parameters and their influence on shear strength. Especially temperature dependence and composition of interface have been focused on.
In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.
In this study, for the first time we successfully bonded Si substrates with sputtered Zr-Al-Cu-Ni metallic glassy material. The surface pre-treatment with formic acid vapor plays a remarkable function for oxides removal before bonding. Metallic glasses have fundamentally glassy structure and exhibit a Newtonian viscous flow in the supercooled liquid region. The polymer-like plastic fluidity performs...
A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip...
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