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In this paper, the effect of biaxial strain on the mobility of single-layer transition metal dichalcogenides (MoS2, MoSe2, WS2, and WSe2) is investigated by accounting for the scattering from intrinsic phonon modes, remote phonons, and charged impurities. $Ab~initio$ simulations are employed to study a strain-induced effect on the electronic bandstructure, and the linearized Boltzmann transport...
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