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Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is becoming popular as fast switching devices for power electronic applications. This paper presents a comparative study of the critical parameters such as on-state resistance, reverse conduction drop, leakage current, maximum junction temperature, threshold voltage, gate charge requirement and device capacitances of commercially...
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out...
In traction application, inverters need to have high reliability on account of wide variation in operating conditions, extreme ambient conditions, thermal cycling and varying DC link voltage. Hence it is important to have a good knowledge of switching characteristics of the devices used. The focus of this paper is to investigate and compare switching characteristics and losses of IGBT modules for...
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