This paper presents a ternary content-addressable memory (TCAM) cell based on a skewed straintronic magnetotunneling junction (MTJ) switch. A straintronic magnetotunneling junction (s-MTJ) is a three-terminal switch, where the resistance between two of the terminals switches when a potential is applied to the third (gate) terminal that induces strain in the magnetostrictive free-layer. An s-MTJ is...
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