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In this paper, for the first time, silicon integrated tuner is presented to extract SiGe:C transistor (HBT) millimeter wave (MMW) noise parameters (NFmin, Rn, Gammaopt) extraction through multi-impedance method. This Tuner is directly integrated On-Wafer at the transistor test structure level. Design and electrical simulation of the tuner are described demonstrating capability from 60 GHz up to 110...
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