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Far-field terahertz imaging is limited by diffraction to low resolutions in the 50 μm range. On the other hand, near-field optical nanoscopy is a recent technique that shows permittivity contrasts at the nanoscale. We present here images of graphene layers on SiO2 obtained by scattering scanning near-field nanoscopy at 2.5 THz that show high contrasts.
Among the different graphene synthesis methods, chemical vapor deposition of graphene on low cost copper foil shows great promise for large scale applications. Here, we present growth experiments to obtain high quality graphene and its clean transfer onto any substrates. Bilayer-free monolayer graphene was obtained by a careful pre-annealing step and by optimizing the H2 flow during growth. The as-grown...
In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality before...
We have studied CO interaction with SiO 2 /Si system at high temperature (~1100°C) and 350mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of...
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