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In this paper we analyze the reliability of atomically thin hexagonal boron nitride (A-BN) dielectric stacks subjected to electrical stresses. The 2D insulating stacks are grown by chemical vapor deposition, meaning that (unlike exfoliated nanosheets) they can cover large areas and are suitable for the fabrication of scalable devices using photolithography tools. By comparing HfO2 and A-BN stacks...
In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories,...
Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US$5 billion [1]. Among all of the existing technologies, flash memory is the most widespread because of its simple structure, high integration, and fast speed [2]. The core cell of this device is based on the charge and discharge of a capacitor using a transistor as a tiny...
Graphene electrodes are being massively introduced in a wide range of electronic devices. On the contrary, exhaustive ageing studies, which are necessary prior to device commercialization, have never been performed before. Here we present the first complete reliability study of a carbon-based electrode, and the main ageing mechanisms are discussed by means of accelerated tests, nanoscale and device...
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