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In this letter, we propose a novel method for the extraction of the crystal-growth parameters as a function of temperature in a reset-programmed phase-change memory cell having fast-growth chalcogenide material. The activation energy for the growth of crystal front is obtained using a physics-based analytical simulation fitting a single temperature-ramp measurement. The fit relies on all data points...
The resistive-switching phase-change memory (PCM) is gaining increasing interest as a potential flash replacement, mainly due to scalability, faster writing and better endurance. PCM cells are typically programmed to the high- resistive amorphous state using a high current pulse (reset programming), and to the low-resistive crystalline state using a longer pulse of lower amplitude (set programming)...
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