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Three- and four-level matrices of 15 times 70 nm Si Nano-Beams have been integrated with a novel CMOS gate-all-around process (GAA) down to 80 nm gate length. Thanks to this 3D-GAA extension of a Finfet process, a more than 5times higher current density per layout surface is achieved compared to planar transistors with the same gate stack (HfO 2/TiN/Poly-Si). For the first time, several properties...
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