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A method for fabrication of junctionless SOI MOS devices for sensor applications is presented in the paper. Two groups of devices, namely FinFET-type devices, and wide MOSFETs have been designed and manufactured in a single process sequence on the same wafer. Electrical measurements of the MOSFETs as well characterization work have been carried out. The characterization work is based on a proposed...
Double-fin p-MOSFETs have been fabricated using PaDEOx process. SOI 133nm wide and bulk 260nm-wide FinFETs have been electrically characterized and compared with the photolithographically patterned 9μm wide fin transistor based on the same layout. Extraction of device parameters: g M , V T , SS, I D,off , R s , R c has been done using sets of devices...
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