Search results for: Daniel Tomaszewski
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The Journal of Rural Health > 34 > 4 > 339 - 346
Purpose
To evaluate differences in prescription medication adherence rates, as well as influencing factors, in rural and urban adults.
Methods
This is a retrospective analysis of the 2015 National Consumer Survey on the Medication Experience and Pharmacists' Role. A total of 26,173 participants completed the survey and provided usable data. Participants using between 1 and 30 prescription medications...
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Reproductive Health > 2017 > 14 > 1 > 1-7
Background Preconception care, including family planning, is a vital component of healthcare for women of reproductive age. An average female spends the majority of her reproductive life trying to prevent a pregnancy. In order to prevent unintended pregnancy, women often rely on the use of hormonal contraceptives. In the United States, the majority of hormonal contraceptive users are prescribed oral...
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A development of the VeSTIC technology is reported. The manufacturing of the test structures with different types of transistors is described. The electrical 1-V characteristics of the MOS and junction field effect transistors and of the bipolar junction transistors produced in VeSTIC technology were measured. Basic parameters of the test devices were extracted using the simple device compact models...
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N-channel junctionless FETs (nJLFETs) with patch antennas have been manufactured using SOI wafers. The sensors exhibit 30μV DC photoresponse to 0.34THz EM radiation. Measurements of their I-V characteristics and sub-THz response characteristics are reported. An ability to influence the sensitivity by substrate biasing has been investigated. The data obtained for the standard nMOSFETs sensors are given...
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A process for manufacturing of the p-type piezoresistor-based monolithic strain sensors is described. The process variants regarding resistor doping techniques and the sensor design are discussed. The offset measurement results are reported. For a detailed characterization of the piezoresistive sensors by the electrical measurements a dedicated test structure has been proposed. Van der Pauw and Kelvin...
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A method for fabrication of VeSFETs, three-dimensional fin-type MOS transistors is presented. The VeSTIC process was developed and experimentally implemented in ITE. The test devics were manufactured, and their electrical characteristics were measured. Methods for extraction of a set of the VeSFET physical parameters are proposed based on the device compact model. The flat-band voltage, mobility and...
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A method for extraction of the threshold voltage corresponding to the front and back interface in FDSOI MOSFETs is proposed. The approach is based on the nonlinear behavior of the capacitances between the source and front/back gate. The method has been discussed using the numerical simulation results and has been demonstrated using the C-V characteristics of the experimental FDSOI devices manufactured...
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Solid-State Electronics > 2017 > 128 > C > 92-101
An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have...
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A GNU Octave - based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I–V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I–V characteristics of the specified models, calculating model misfit and its sensitivity to...
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A method for an extraction of a MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior along the gate-source voltage variation. A channel current effect on the threshold voltage extraction is fully eliminated. In parallel the junction capacitance and its planar and sidewall components are determined. A non-iterative method for...
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The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of...
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In the paper a simple compact model of a transfer of a mechanical energy into an electrical energy is presented. The mechanical energy is stored in a vibrating bimetallic membrane with an electret layer. The membrane vibrations are forced by a set-up consisting of a cold and hot surfaces. During the vibrations this set-up acts as a variable capacitor with one of the electrodes being constantly charged...
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The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The...
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Two simple non-iterative methods of MOSFET threshold voltage parameter extraction are presented. They are valid for threshold voltage-based and charge-based compact models of MOS transistors. The methods take advantage of the features of the model formulae and their derivatives. The methods have been illustrated using both real measurements and data obtained via simulation of simple circuits used...
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A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I–V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I–V characteristics...
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A method for fabrication of junctionless SOI MOS devices for sensor applications is presented in the paper. Two groups of devices, namely FinFET-type devices, and wide MOSFETs have been designed and manufactured in a single process sequence on the same wafer. Electrical measurements of the MOSFETs as well characterization work have been carried out. The characterization work is based on a proposed...
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A simple method for data analysis in semiconductor device characterization and compact modeling is proposed. The method allows for a direct comparison of data originating from different sources, e.g. from measurement and simulation. The comparison is carried out via forming a direct correlation between the device characteristics under consideration, e.g. between the currents of the real device and...
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This paper summarizes work performed in ITE on development of ionizing radiation detectors integrated on-chip with readout electronics. First, the construction of such detectors will be presented in brief, together with the main features of non-typical silicon process deployed, then the test structures sent for prototyping will be discussed in detail.
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Methods of a MOSFET threshold voltage extraction have been briefly described. A possibility of their application for characterization of a fully-depleted SOI MOSFETs has been discussed. A simple method for SOI MOSFET threshold voltage characterization has been proposed. The concept has been verified based on experimental data obtained for SOI MOSFETs manufactured in ITE.
