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We present in this report the results of experimental study on the spectrochemical analysis of powder samples using subtarget supported micro mesh (SSMM) sample holder in low pressure ambient gases. The study is substantiated by establishing the analyte excitation mechanism with the evidence of shock wave plasma generation and the high temperature induced subsequently required for the thermal excitation...
We propose and demonstrate nanoisland bandedge lasers. We employed selective quantum-well wet-etching technique to create nanoisland array in between InP claddings of a prefabricated photonic crystal structure. We observed reduction of laser threshold as we reduced the nanoisland's sizes by increasing the wet-etching time.
Nanobeam laser with threshold 230 nW is demonstrated in continuous-wave operation at room-temperature. This is achieved by reducing the size of active medium to 1.5×0.3×0.02 μm3 via selective wet-etching of a single quantum well layer.
We demonstrate in-situ monolithic integration of an InP-based nanobeam laser and a passive waveguide on SOI using selective quantum well etching technique. The device on SOI platform is realized by employing transfer printing process.
A nanobeam photonic crystal cavity made with InGaAsP quantum well and Si waveguide is integrated on SiO2/Si substrate via transfer printing. The light emitted from the nanobeam showed coupling to waveguide. We demonstrated novel way to integrate III-V devices on Si based photonic integrated circuits.
A nanobeam laser made of InGaAsP material is printed on a SiO2/Si substrate via transfer-printing process. From this structure, single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature is achieved.
We study selective wet-etching systems for realizing self-aligned nano-emitters. Controllability of the nano-emitters' shapes, sizes and positions are the major advantages of this method. Emission of nano-emitters at telecom-wavelength is characterized from the photoluminescence measurement.
Nanobeam laser with nano-island quantum well (QW) is demonstrated. Continuous operation with 210 nW threshold is achieved at room-temperature. We remove the absorptive QW surrounding the central cavity, leaving the gain only inside 0.7×0.25×0.02 μm3.
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