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This paper presents full-quantum 3-D simulations predicting the electrical performance of nanowire tunnel-FETs based on III–V hetero-junctions. Our calculations exploit an eight-band $\mathrm {k}\cdot \mathrm {p}$ Hamiltonian within the nonequilibrium Green’s functions formalism and include phonon scattering. It is shown that the on-current of GaSb/InAs hetero-junction tunnel-FETs is limited by...
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