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1.27-μm high-density quantum-dot DFB lasers for 10G-EPON were developed. Fabricated lasers exhibited temperature-stable light-current characteristics and clearly-opened 10.3-Gb/s eye-diagrams with a high averaged output power of +4.5dBm from −10°C to 85°C.
Wide-temperature-range 10.3 Gbit/s operations of 1.3 μm distributed feedback (DFB) lasers using high-density quantum dots are presented. Clearly opened eye diagrams are obtained from -40 to 80 C with extinction ratios of more than 5.2 dB.
High-speed modulation characteristics of 1.3-μm InAs/GaAs high-density quantum-dot lasers are presented. The high-density quantum-dot active layers provided high net modal gain beyond 40cm-1. Fabricated Fabry-Perot lasers have exhibited an extended modulation bandwidth and 25-Gbps direct modulation, for the first time, in 1.3-μm quantum dot lasers.
Temperature-stable 10.3-Gb/s operation was attained for 1.3-μm quantum-dot DFB lasers with high modal gain. Clearly-opened eye diagrams with the extinction ratio of over 5.2 dB were obtained from -40°C to 80°C.
We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.
Temperature-stable operation of 1.3-mum quantum-dot DFB lasers with anti-reflection coated facets was realized by utilizing GaInP/GaAs gratings. A 10.3-Gb/s modulation under fixed driving conditions was achieved between 15degC and 70degC.
Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air-bridge type GaAs-photonic crystal slab is demonstrated. The lasing is found to occur without Fabry-Perot mirrors, and also without any reflection at the sample edge. A distributed feedback mechanism at the band edge with a vanishingly-small group-velocity is responsible...
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