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Compact silicon carbide (SiC) power semiconductor device models for circuit simulation have been developed for power Schottky, merged-PiN-Schottky, PiN diodes, and MOSFETs. In these models, the static and dynamic performance of the power SiC devices requires specific attention to the low-doped, voltage blocking drift region; the channel transconductance in MOS devices; the relatively low-intrinsic...
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