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We have developed the technologies to fabricate about 0.1-/spl mu/m-gate-length GaAs MESFETs with a multilayer interconnection structure. We fabricated excellent high-frequency performance of a 0.06-/spl mu/m-gate-length MESFET having current-gain cutoff frequency (f/sub T/) of 168 GHz. Using 0.13-/spl mu/m-gate-length MESFETs, we also fabricated an ultra-high-speed decision circuit operating up to...
The current-voltage characteristics of a GaAs vertical field effect transistor (VFET) with an n/sup +/ip/sup +/in/sup +/ planar doped barrier (PDB) launcher has been successfully improved by the optimisation of the launcher structure as well as the reduction of the channel width. Electron-beam direct writing has been used to obtain a small channel width of 0.1 approximately 0.15 mu m, resulting in...
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