An improved model is introduced to represent NN+-P-v-N+ high-voltage power switching transistors. This model differs from the conventional Ebers-Moll model in three major respects: (1) a non-linear collector resistance is included to account for conductivity modulation in the collector region; (2) the forward current gain is made to depend on VCE as well as Ic so as to account for the Early effect;...
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