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The impact of silicon technology scaling trends and the associated technological innovations on RF CMOS device characteristics are examined. The application of novel strained silicon and high-k/metal gate technologies not only benefits digital systems, but significantly improves RF performance. The peak cut-off frequency (fT) doubles from 209 GHz in the 90 nm node to 445 GHz at the 32 nm node. 1/f...
The focus of this work is to demonstrate the effect of mechanical stress in the channel on the impact ionization rate (IIR) and on hot carrier reliability for both NMOS and PMOS devices. In addition, this study will explain the reason for the wide disagreement between published reports on this behavior. It is shown for the first time that the IIR reaches a maximum value with strain for NMOS and then...
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