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Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides...
To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough...
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