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Discrete high power RF varactors based on bariumstrontium-titanate are presented in this paper. They are targeting high power applications up to 3 GHz and feature power handling capabilities up to 50 W as well as promising tunability, due to the novel metal-insulator-metal configuration. The varactors are fabricated on Al2O3 in screen-print thick-film technology and mounted in RF-power transistor...
This work addresses tunable matching networks fabricated on functional thick film layers of Barium-Strontium-Titanate (BST) for RF-power transistors. The deposition of BST layers is performed in a screen-printing process and the fabricated components are patterned by photolithography. Around 2.0 GHz, the insertion loss varies in a range between 0.7 dB and 1.1 dB depending on the tuning state and frequency,...
A thick-film Barium-Strontium-Titanate (BST) varactor is evaluated as gate pre-matching element for integration in discrete RF-power GaN-HEMTs. The tunable pre-matching is connected to the gate of a 2 mm GaN cell and characterized by load-pull measurements in the 2 to 3 GHz range. The assembly shows large tunable impedance range with low impact on power performance. At 2.0 GHz gain is reduced by 3...
In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design prototype is evaluated for tunable networks in a load-pull investigation at 0.9 GHz, 1.3 GHz, and 2.0 GHz. It is shown that the individual GaN-cell BST networks can handle more than 2 W output power but the network losses reduce the drain efficiency...
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based...
In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design prototype is evaluated for tunable networks in a load-pull investigation at 0.9 GHz, 1.3 GHz, and 2.0 GHz. It is shown that the individual GaN-cell BST networks can handle more than 2 W output power but the network losses reduce the drain efficiency...
In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based...
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