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A vertically stacked quad junction photodetector (PD) with an enhanced spectral responsivity for blue light is presented. This PD is implemented in a 0.35 µm high voltage complementary metal-oxide semiconductor (CMOS) technology. In addition, an optical window, an antireflection coating and a modified p+ doping are used to attain the enhancement for blue light. The proposed PD is compared against...
A novel monolithically integrated optoelectronic receiver with a 200 μm diameter, high responsivity avalanche photodiode (PD) is presented. The whole receiver was developed in a high-voltage 0.35 μm CMOS technology. This permits high PD bias voltages and the implementation of the receiver circuitry in a single chip. With a PD bias voltage of 65 V, a high responsivity of 30 A/W has been reached at...
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