The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Low-power embedded memory and an ARM Cortex-M0 core that operate at 30 MHz were fabricated in combination with a 60-nm c-axis aligned crystalline indium–gallium–zinc oxide FET and a 65-nm Si CMOS. The embedded memory adopted a structure wherein oxide semiconductor-based 1T1C cells are stacked on Si sense amplifiers. This memory achieved a standby power of 3 nW while retaining data and an active power...
A chip of embedded SRAM having backup circuits using a 60-nm c-axis aligned crystalline oxide semiconductor (CAAC-OS) such as CAAC indium-gallium-zinc oxide (CAAC-IGZO) and Cortex-M0 core having flip-flops with CAAC-OS backup circuits is fabricated. The SRAM and M0 core can retain data using the backup circuits during power-off; thus, they can perform power gating (PG) with backup time of 100 ns and...
Using data retention circuits that include crystalline oxide semiconductor transistors as backup circuits for power gating, a processor system can reduce standby leakage current significantly. This is effective in the Internet of Things (IoT) applications that require standby power reduction. The crystalline oxide semiconductor transistor can constitute a nonvolatile data retention circuit easily...
A processor having a power management unit (PMU) and an 8-bit CPU including flip-flops with shadow memories is fabricated by 0.5-μm Si and 0.8-μm c-axis-aligned crystalline In-Ga-Zn-oxide (CAAC-IGZO) technology. The shadow memories hold data without power supply utilizing low off-state current of CAAC-IGZO FETs. A break-even time (BET) of 4.9μs has been obtained. Good scalability of the processor...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.