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By pumping the 1.4 cm long θ=9.2° and φ=0° cut BaGa4S7 crystal [1] oriented for the 90° phase-matching conditions along the z(=b) axis with the Quanta Ray GLR-20 Nd:YAG laser incorporating the BBO/OPO and by changing the crystal temperature from 25 °C to 180 °C, we have generated the tunable mid-IR pulses in the 5.341–7.477 μm range.
To investigate the origin of a significantly low off-state current of a field-effect transistor with a crystalline In-Ga-Zn-oxide (IGZO) semiconductor channel, this paper focuses on the drain-to-channel tunneling of holes and presents calculations of the tunneling current density. The calculations show that a hole has an effective mass about ten times as large as the mass of a bare electron, and that...
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