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Wafer sized, high quality continuous films would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer MoS2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence...
Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics...
In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature. The HIT solar cell has a very thin emitter layer on the light-incident surface (about 10nm) and the contact region was passivated by hydrogen (H2) plasma...
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