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In this study, sintered Cu is shown to have superior reliability to that of sintered Ag, in a high-temperature thermal cycle test up to 200°C and superior power cycle durability at a maximum junction temperature of 175°C. A 1700 V low-stray-inductance dual module made with sintered Cu and a leading-edge side-gate HiGT (High-conductivity IGBT) is also shown to have high power density with low loss...
We present a new concept in insulated-gate bipolar transistor (IGBT) gate drivers with a blocking voltage up to 3.3kV that have a pulse transformer interface and a function for self-adjusting active gate control. The error-correcting decoder we proposed contributed to the reliability of signal transmission. Moreover, the method of gate control using differentiation of gate voltage could automatically...
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