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A clear current kinked phenomenon was observed in Al/SiO2/Si(p) structures with nanoscale (<2.5 nm) SiO2 in a forward biased region. It was found that the kinked points are dependent on oxide thickness and are not the same as flat-band voltages. A model regarding the oxide voltage dropping efficiency with the consideration of interface trap density ( D it ) and effective...
H 2 O in SiO 2 layer is important to the electrical characteristics of metal-oxide-semiconductor structure. A method to control the amount of H 2 O in SiO 2 layer was proposed in this experiment. Anodization was utilized to grow the SiO 2 layer with abundant H 2 O. Comparatively, SiO 2 layer with reduced H 2 O was prepared by adding a...
In this work, MOS photovoltaic mechanism with side wall trap-assist tunneling path by oxide etching was demonstrated. It was clearly observed that the photo response of device with oxide etching is tremendously enhanced with respect to that without. The efficiency of MOS photovoltaic with side wall trap-assist tunneling is strongly dependent on the etched potion of oxide. The perimeter of electrode...
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