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This paper presents extensive experimental switching characteristics of a state-of-the-art 15 kV SiC N-IGBT (0.32 cm2 active area) up to 10 kV, 10 A and 175°C. The influence of the thermal resistance of the module package, cooling mechanism, and the increased energy loss with temperature are investigated for determining the switching frequency limits of the IGBT. Detailed FEM analysis is conducted...
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