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A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer,...
An ultra-low specific on-resistance (Ron,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper. On-resistance analytical model for the proposed LDMOS is built to provide an in-depth insight into the relationship between the drift region resistance and the channel region resistance. N-buried...
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