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We present an edge-light emitting diode based on highly doped Ge/Si μ-strips starined by a SiN top stressor. The device, manufactured in a BiCMOS pilot line, shows RT NIR electroluminescence in a spectral region extending from the C- to the U-telecom bands and beyond.
The realization of a Si-integrated light source represents today the “Holy Grail” of silicon photonics. An approach based on slightly tensile strained (εtherm∼2.5×10−3) Ge/Si heterostructures has led to the demonstration of both optically [1] and electrically [2] pumped laser. This achievement has been welcomed by the scientific community as a leap toward a monolithically integrated silicon-based...
A generic InP based monolithic photonic integration platform is introduced that is capable of simultaneously incorporating transmitter, receiver and passive-optical functionalities. On this basis, an integrated transmitter component for THz applications has been implemented.
We examine nonlinear interactions between a short pulse and a CW oscillating field in a 1500nm quantum dot laser. A clear spectral hole is observed using X-FROG measurements which are confirmed by FDTD simulations.
An integrated photonic chip allows for full control of the THz signal in cw THz photomixing systems. This THz control unit does provide direct access to the THz amplitude and phase via standard electronics as well as continuous tuning of the beat frequency over a frequency range larger than 1 THz
Surface-emitting DFB lasers using a 45° total-internal-reflection facet mirror were optimized to feature extremely low threshold currents enabling deployment of commercial VCSEL drivers. The lasers incorporate a monitor photodiode that require no additional processing steps. An 8-array of such devices operated at 1.25 Gb/s showed a high degree of modulation uniformity and consumes only 1.4 W.
We present fabrication and testing of a wavelength converter integrated on a silicon-on-insulator substrate. The chip employs a hybrid integrated SOA and delay-interferometers integrated on 4μm SOI. We demonstrate 40Gb/s error-free performance.
We present an ONU featuring a “colorless” DML enabled by a wavelength converter integrated on a 4μm silicon-on-insulator substrate. The photonic chip employs a hybrid integrated SOA and delay-interferometers and supports operation beyond 10Gb/s.
We demonstrate data transmission and switching using a packaged and pigtailed all-optical wavelength converter. The module employs a hybrid integrated SOA and two cascaded delay-interferometers on a 4µm SOI. We present wavelength routing with power penalties less than 5dB.
We present an ONU featuring a "colorless" DML enabled by a wavelength converter integrated on a 4μm silicon-on-insulator substrate. The photonic chip employs a hybrid integrated SOA and delay-interferometers and supports operation beyond 10Gb/s.
We present fabrication and testing of a wavelength converter integrated on a silicon-on-insulator substrate. The chip employs a hybrid integrated SOA and delay-interferometers integrated on 4μm SOI. We demonstrate 40Gb/s error-free performance.
High-precision hybrid integration on SOI photonic circuit was developed. The technology was applied to fabricate an integrated high-speed all-optical wavelength converter. Potential of the platform was demonstrated by 40Gb/s all-optical wavelength switching.
BOOM is a photonic integration concept that aims to develop compact, cost-effective and power efficient silicon photonic components for high capacity routing functionalities. To accomplish this, flip-chip bonding and heterogeneous wafer scale fabrication techniques are employed that enable Si manufacturing with III-IV material processing. We present in this paper the second generation of BOOM devices...
1490 nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3...7 mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8 GHz. The integrated monitor diode operates temperature independent and is therefore well...
During the past years, monolithic integration in InP has been the driving force for the realization of integrated photonic routing systems. The advent of silicon as a basis for cost-effective integration and its potential blend with III-V material is now opening exciting opportunities for the development of new, high-performance switching and routing equipment. Following this rationale, BOOM-as a...
In this paper we present new design of an all-optical wavelength converter (AOWC) based on silicon-on-insulator platform. For that purpose we combine nonlinearities of semiconductor optical amplifiers (SOA) with high finesse Mach-Zehnder filters, available in SOI-technology.
Passive feedback lasers for operation at 1.3 mum are developed with 32 GHz bandwidth and 7 dB extinction ratio. Transmission over 20 km uncompensated fibre link is demonstrated at 28 Gb/s and 40 Gb/s.
A study of thermal crosstalk between III-V hybrid integrated directly modulated laser diodes and driver IC in BiCMOS technology on SOI is presented. We derived design rules and cooling requirements from thermal modelling.
A DPSK receiver using a flip-chip hybrid of InP photodetectors on SOI boards with waveguide delay line interferometer and SOA preamplifier on SOI boards are developed. The horizontal waveguide integration enables bandwidths exceeding 40 GHz.
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