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This letter investigates the impact of fin line-edge roughness (Fin-LER) on the intrinsic variation of negative capacitance FinFETs (NC-FinFETs) by TCAD atomistic simulation coupled with the Landau–Khalatnikov equation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to...
This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for Vt, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device...
In this work, we investigate the Vth variability of Si- and Ge-channel FinFET with various surface orientations using analytical solution of Schrδdinger equation. The theoretical model provides us a physical and efficient method to explore the impact of quantum-confinement effect. In addition, to validate the results predicted by the theoretical model, we also perform the 3-D atomistic simulation...
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