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This paper investigates the impact of quantum confinement (QC) on the backgate-bias modulated subthreshold and threshold-voltage characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical solution of the Schrödinger equation verified with TCAD numerical simulation. Our study indicates that the QC effect reduces the sensitivity of the...
This work examines the electrostatic integrity for UTB GeOI and InGaAs-OI n-MOSFETs considering quantum confinement (QC) using derived analytical solution of Schrödinger equation verified with TCAD simulation. Our study indicates that the QC effect improves the subthreshold swing of UTB devices. Since Ge, InGaAs, and Si channels exhibit different degree of quantum confinement due to different quantization...
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