The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.
This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between co-processed strained and unstrained devices, it is found that the tunneling attenuation length for channel carriers penetrating into the gate dielectric...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.