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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has...
The paper reports on the free carrier absorption loss associated with silicon phase modulator. Two structures are compared: p-i-n and n-p-n structure. The simulations are realized utilizing the 2-D semiconductor simulation package SILVACO. Simulations predict that both structures operate more efficiently at 1.3 μm in terms of free carrier absorption loss. At 1.3 μm, the calculated free carrier absorption...
This paper highlights the study of carrier depletion effect on silicon waveguide with p-i-n diode and NPN structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. Device performances in terms of modulation efficiency will be discussed.
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