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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
The morphology and optical properties of Zn1-xMnxO films were synthesized by sol gel method using spin coating technique. Zn1-xMnxO thin films is prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution is stabilized by MEA. The quantity of Mn in the sol was varied from x = 0,0.02, 0.04, 0.06 and 0.08 with annealing temperature of 600°C. Investigation...
Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using a spin coating technique. Zn1-xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution was stabilized by MEA. The quantity of Mn in the sol was varied from x = 0, 0.02 and 0.04 with annealing temperature of 700°C...
Vacuum evaporated thin films of indium phthalocyanine chloride are prepared at room temperature. Post evaporation annealing is done at temperatures of 353 K, 403 K, 453 K and 503 K. The electrical conductivity and optical absorption spectra of these films are studied. From the optical absorption spectra, over a wavelength range of 200-900nm, the optical energy band gap Eg is calculated. A decrease...
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