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Time evolution of resistance during EM tests is extensively analyzed for various Cu interconnect structures and processes from the 40 nm node technology. Resistance evolution is used to model void nucleation and growth kinetics. We show that adding Al or other impurities in the line is effective to increase electromigration lifetime. This lifetime increase is due, as expected, to Cu drift velocity...
Electromigration failure mode has been recognized as a strong limitation to scaling of copper interconnects for years. The development, as well as manufacturing monitoring, of advanced CMOS processes requires a large number of electromigration tests. Such industrial need is in favour of fast wafer level test rather than long-term tests on packaged samples. However, lifetimes issued from wafer level...
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