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As continue shrinking of microelectronic device features, removal of nano-particle contaminations is becoming a major challenge in semiconductor manufacturing. After effective wafer cleaning, high particles removal efficiency must be achieved without substrate loss or damage to high aspect ratio structures. In this work, a novel dual-fluid spray nozzle was tested. The cleaning performance with control...
We present and demonstrate a self-aligned pocket well (SPW) structure used in planar bulk MOSFETs with a metal gate length of 25 nm and an effective channel length less than 20 nm. The SPW features a retrograde doping profile in vertical direction and a doping profile self-aligned with drain/extension in lateral direction. A novel process, called replacement spacer gate (RSG), is designed to avoid...
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