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Copper phthalocyanine (CuPc)-based thin film transistors were fabricated using CuPc films grown under different deposition pressure (P dep ) (ranging from 1.8×10 −4 Pa to 1.0×10 −1 Pa). The transistor performance highly depended on P dep . A field-effect mobility of 2.1×10 −2 cm 2 /(Vs) was achieved under 1.0×10 −1 Pa. Detailed investigations...
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