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In this paper, a double heterojunction bipolar transistor (DHBT) process has been developed in transferred-substrate (TS) technology to optimize high-frequency performance. It provides an aligned lithographic access to frontside and backside of the device to eliminate dominant transistor parasitics. The transistors of 0.8 times 5-mum2 emitter mesa feature ft = 410 GHz and fmax = 480 GHz at a BVceo...
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